ABSTRACT

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecomm

chapter 1|22 pages

Introduction to Semiconductor Compounds

chapter 2|22 pages

Growth Technology

chapter 3|60 pages

In situ Characterization during MOCVD

chapter 4|58 pages

Ex situ Characterization Techniques

chapter 5|30 pages

MOCVD Growth of GaAs Layers

chapter 7|34 pages

Optical Devices

chapter 8|52 pages

GaAs-Based Lasers

chapter 10|16 pages

Optoelectronic Integrated Circuits (OEICs)